DocumentCode
3558117
Title
Comparison of methods used for determining base spreading resistance
Author
Unwin, R.T. ; Knott, K.F.
Author_Institution
Huddersfield Polytechnic, Department of Electrical and Electronic Engineering, Huddersfield, UK
Volume
127
Issue
2
fYear
1980
fDate
4/1/1980 12:00:00 AM
Firstpage
53
Lastpage
61
Abstract
A study of the many methods used for measuring base spreading resistance, rbb´ has shown that some of them are inaccurate or unfeasible when applied to planar transistors. Methods investigated cover the d.c.to microwave frequency range and include coherent and incoherent signal measurements. Comparisons are also made of measured and theoretical values for several types of device. The thermal-noise method appears best because of its accuaracy and wide applicability.
Keywords
bipolar transistors; electric resistance measurement; semiconductor device testing; solid-state microwave devices; base contact resistance; base metallisation; base spreading resistance; bipolar transistors; coherent signal measurement methods; current crowding; inactive base region; microwave devices; noise performance; planar devices; power gain; second breakdown; thermal noise measurement;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
4/1/1980 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1980.0010
Filename
4642475
Link To Document