Title :
Large-signal behaviour and capability of the transistor transit-time oscillator
Author :
Druelle, Y. ; Crosnier, Y. ; Salmer, G.
Author_Institution :
Universit?ƒ?© des Sciences et Techniques de Lille, Centre Hyperfr?ƒ?©quences et Semiconducteurs, LA CNRS 287, Villeneuve d´´Ascq, France
fDate :
4/1/1980 12:00:00 AM
Abstract :
The transistor transit-time oscillator (t.t.t.) feasibility has been demonstrated in recent years. Small signal, negative resistance and oscillations were obtained and the main limitations were reported. The present paper gives device potential performances under large-signal c.w. operations and proposes an optimised structure for 10 GHz.
Keywords :
microwave oscillators; solid-state microwave circuits; transit time devices; Early effect influence; X-band; coaxial cavity; continuity equation; exponential base doping profile; large signal measurements; small signal theory; transistor transit time microwave oscillator;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1980 12:00:00 AM
DOI :
10.1049/ip-i-1.1980.0013
