• DocumentCode
    3558121
  • Title

    Techniques for analytically determining surface potential and mobility of an m.o.s. transistor

  • Author

    Backensto, W.V. ; Viswanathan, C.R.

  • Author_Institution
    Hughes Aircraft Company, Culver City, USA
  • Volume
    127
  • Issue
    2
  • fYear
    1980
  • fDate
    4/1/1980 12:00:00 AM
  • Firstpage
    81
  • Lastpage
    86
  • Abstract
    Techniques for evaluating the surface potential and the effective surface mobility of a m.o.s. transistor are described. These techniques include determination of the fixed oxide charge density, the surface-state charge density and the average donor concentration. The surface potential is evaluated as a function of gate voltage, because this dependence is necessary in order to calculate the density of surface states from charge-pumping measurements. The effective surface mobility is evaluated as a function of bias, because this dependence is necessary in order to develop a bias-dependent 1/f noise model of a m.o.s. transistor.
  • Keywords
    carrier mobility; insulated gate field effect transistors; semiconductor device models; surface potential; 1/f noise; IGFET; MOST; average donor concentration; charge pumping measurements; effective surface mobility; fixed oxide charge density; gate voltage; semiconductor device noise models; surface potential; surface state charge density;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    4/1/1980 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1980.0015
  • Filename
    4642480