DocumentCode
3558121
Title
Techniques for analytically determining surface potential and mobility of an m.o.s. transistor
Author
Backensto, W.V. ; Viswanathan, C.R.
Author_Institution
Hughes Aircraft Company, Culver City, USA
Volume
127
Issue
2
fYear
1980
fDate
4/1/1980 12:00:00 AM
Firstpage
81
Lastpage
86
Abstract
Techniques for evaluating the surface potential and the effective surface mobility of a m.o.s. transistor are described. These techniques include determination of the fixed oxide charge density, the surface-state charge density and the average donor concentration. The surface potential is evaluated as a function of gate voltage, because this dependence is necessary in order to calculate the density of surface states from charge-pumping measurements. The effective surface mobility is evaluated as a function of bias, because this dependence is necessary in order to develop a bias-dependent 1/f noise model of a m.o.s. transistor.
Keywords
carrier mobility; insulated gate field effect transistors; semiconductor device models; surface potential; 1/f noise; IGFET; MOST; average donor concentration; charge pumping measurements; effective surface mobility; fixed oxide charge density; gate voltage; semiconductor device noise models; surface potential; surface state charge density;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
4/1/1980 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1980.0015
Filename
4642480
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