Title :
Filament displacement and refraction losses in a stripe-geometry AIGaAs d.h. laser
Author_Institution :
Hewlett-Packard, Solid State Laboratory, Hewlett-Packard Laboratories, Palo Alto, USA
fDate :
4/1/1980 12:00:00 AM
Abstract :
The far-field, near-field and waist-intensity distributions are investigated in the nonlinear flux-current regime (kink) of a stripe-geometry d.h. laser at each of its two facets. The results are interpreted as a displacement of a deformable light guide or filament within the laser stripe, which acts as an additional built-in antiguide. Asymmetries in the far-field side-lobe intensities indicate enhanced refraction losses of the displaced filament towards that antiguide boundary towards which the near field moves and the far-field main lobe turns.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; AlGaAs stripe geometry DH laser; deformable light guide; far field side lobe intensity; filament displacement; nonlinear flux current regime; refraction losses; semiconductor junction lasers; waist intensity distributions;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1980 12:00:00 AM
DOI :
10.1049/ip-i-1.1980.0017