Title :
Required minimum value of barrier height in minority-carrier m.i.s. solar cells
Author_Institution :
Technical University of Denmark, Laboratory for Semiconductor Technology, Lyngby, Denmark
fDate :
6/1/1980 12:00:00 AM
Abstract :
The saturation currents of minority-and majority-carrier m.i.s. solar cells have been compared to find the value of the barrier height ¿¿ms, where the dominating saturation current changes from a majority-carrier current to a minority-carrier current. For an interfacial oxide layer of 20 Å, the value of¿¿ms has been calculated to be in the range 750-800 mV, whereas for an oxide layer of 10 Å, ¿¿ms, is found to be about 900-950 mV.
Keywords :
Schottky-barrier diodes; metal-insulator-semiconductor devices; semiconductor device models; solar cells; metal insulator semiconductor structure; minority carrier MIS solar cells; required minimum barrier height;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
6/1/1980 12:00:00 AM
DOI :
10.1049/ip-i-1.1980.0020
