Title :
Injection phase delay in high-power Baritt oscillators
Author_Institution :
Central Electronics Engineering Research Institute, Solid State Devices Division, Pilani, India
fDate :
6/1/1980 12:00:00 AM
Abstract :
Large-signal injection phase delay in Baritt oscillators can be estimated from the measured d.c. and microwave characteristics of the device used, provided a constant transit time with bias current is assumed. This has been examined in the present work and a simple method has been described with a practical example.
Keywords :
BARITT diodes; microwave oscillators; semiconductor device models; solid-state microwave circuits; Baritt diodes; DC characteristics; high power Baritt oscillators; large signal injection phase delay; microwave characteristics; phase delay estimation;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
6/1/1980 12:00:00 AM
DOI :
10.1049/ip-i-1.1980.0021
