• DocumentCode
    3558127
  • Title

    Injection phase delay in high-power Baritt oscillators

  • Author

    Ahmad, S.

  • Author_Institution
    Central Electronics Engineering Research Institute, Solid State Devices Division, Pilani, India
  • Volume
    127
  • Issue
    3
  • fYear
    1980
  • fDate
    6/1/1980 12:00:00 AM
  • Firstpage
    109
  • Lastpage
    110
  • Abstract
    Large-signal injection phase delay in Baritt oscillators can be estimated from the measured d.c. and microwave characteristics of the device used, provided a constant transit time with bias current is assumed. This has been examined in the present work and a simple method has been described with a practical example.
  • Keywords
    BARITT diodes; microwave oscillators; semiconductor device models; solid-state microwave circuits; Baritt diodes; DC characteristics; high power Baritt oscillators; large signal injection phase delay; microwave characteristics; phase delay estimation;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    6/1/1980 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1980.0021
  • Filename
    4642487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3558127