Theory of switching in p-n-insulator (tunnel)-metal devices: thick-tunnel oxides and indirect tunnel effects

Author

Habib, S.E.D. ; Simmons, J.G.

Author_Institution

University of Toronto, Department of Electrical Engineering, Toronto, Canada

Volume

127

Issue

3

fYear

1980

fDate

6/1/1980 12:00:00 AM

Firstpage

111

Lastpage

118

Abstract

The four-layered m.i.s.s. device (metal-tunnel insulator-n-p semiconductor) displays a current-controlled negative resistance in its I/V characteristics. This switching mechanism is the result of a regenerative feedback interaction between the p-n junction and the metal-tunnel insulator-semiconductor parts of the device. The modes of operation of the m.i.s.s. can be classified into avalanche or punch-through mode devices; thin- or thick-tunnel oxide devices; direct-tunnel (e.g. (100)-oriented Si) or indirect tunnel (e.g. (111)-oriented Si) devices. A detailed model of the m.i.s.s. is developed to account for both the thick-tunnel oxide m.i.s.s. and the indirect-tunnel m.i.s.s. The latter two modes exhibit a higher holding voltage than that of the thin-tunnel oxide m.i.s.s. The holding voltage of the thick-tunnel oxide m.i.s.s. increases monotonically with the oxide thickness.

Keywords

metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; semiconductor device models; semiconductor switches; I/V characteristics; MIS devices; avalanche mode devices; current controlled negative resistance; four layer MISS device; holding voltage; indirect tunnel effects; operation; p-n junction; p-n-i-m devices; punch through mode devices; regenerative feedback interaction; semiconductor device models; semiconductor switches; switching mechanism; thick tunnel oxide devices; tunnelling;

fLanguage

English

Journal_Title

Solid-State and Electron Devices, IEE Proceedings I

Publisher

iet

Conference_Location

6/1/1980 12:00:00 AM

ISSN

0143-7100

Type

jour

DOI

10.1049/ip-i-1.1980.0022

Filename

4642488