Title :
Inversion-controlled switching mechanism of m.i.s.s. devices
Author :
Sarrabayrouse, G. ; Buxo, J. ; Owen, A.E. ; Munoz Yague, A. ; Sabaa, J-P.
Author_Institution :
Centre National de la Recherche Scientifique, Laboratoire d´´Automatique et d´´Analyse des Syst?ƒ??mes, Toulouse, France
fDate :
6/1/1980 12:00:00 AM
Abstract :
Experiments are reported on the switching characteristics of m.i. Si (n) Si(p+) devices with a thin oxide insulating layer (I). The influence of temperature, light and carrier injection into the n-layer are analysed. Theoretical interpretation is based on a model which takes into account the multiplication mechanism which occurs at the Si-SiO2 interface when it is inverted.
Keywords :
metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; semiconductor device models; semiconductor switches; I/V characteristics; MISS devices; Si-SiO2 interface; carrier injection effects; inversion controlled switching mechanism; light effects; multiplication mechanism; p-n-i-m devices; semiconductor device models; switching characteristics; temperature effects; thin oxide insulating layer;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
6/1/1980 12:00:00 AM
DOI :
10.1049/ip-i-1.1980.0023
