DocumentCode
3558129
Title
Inversion-controlled switching mechanism of m.i.s.s. devices
Author
Sarrabayrouse, G. ; Buxo, J. ; Owen, A.E. ; Munoz Yague, A. ; Sabaa, J-P.
Author_Institution
Centre National de la Recherche Scientifique, Laboratoire d´´Automatique et d´´Analyse des Syst?ƒ??mes, Toulouse, France
Volume
127
Issue
3
fYear
1980
fDate
6/1/1980 12:00:00 AM
Firstpage
119
Lastpage
125
Abstract
Experiments are reported on the switching characteristics of m.i. Si (n) Si(p+) devices with a thin oxide insulating layer (I). The influence of temperature, light and carrier injection into the n-layer are analysed. Theoretical interpretation is based on a model which takes into account the multiplication mechanism which occurs at the Si-SiO2 interface when it is inverted.
Keywords
metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; semiconductor device models; semiconductor switches; I/V characteristics; MISS devices; Si-SiO2 interface; carrier injection effects; inversion controlled switching mechanism; light effects; multiplication mechanism; p-n-i-m devices; semiconductor device models; switching characteristics; temperature effects; thin oxide insulating layer;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
6/1/1980 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1980.0023
Filename
4642489
Link To Document