Degradation behaviour of n-channel m.o.s.f.e.t.s operated at 77K

N-channel m.o.s. transistors have been operated at an ambient temperature of 77K with VDS = VGS to maximise the generation of high-energy (`hot¿) electrons in the channel. All the major transistor parameters exhibited substantial shifts which can be ascribed to two degradation mechanisms, namely the well known trapping of electrons in the gate oxide near the drain, and the generation of lattice defects in the semiconductor.