Title :
Computer technique for solving schottky barrier from dark forward current-voltage characteristics
Author :
Boutrit, C. ; Georges, J.C. ; Ravelet, S.
Author_Institution :
Universit?ƒ?© de Nancy I, ISIN, Laboratoire d´´Electronique et de Physique des Interfaces, Vandoeuvre-l?ƒ??s-Nancy, France
fDate :
10/1/1980 12:00:00 AM
Abstract :
The paper describes a computer technique for determining series resistance, shunt conductance, saturation current, ideality factor, and hence the apparent barrier height of metal-semiconductor devices from dark forward current characteristics using a least-squares fitting of experimental measurements with a theoretical model. The model used is based on the thermionic theory, incorporating both series and shunt resistance effects.
Keywords :
Schottky effect; least squares approximations; semiconductor device models; semiconductor-metal boundaries; barrier height; computer technique; dark forward current characteristics; ideality factor; least squares approximations; metal semiconductor devices; saturation current; series resistance; shunt conductance; thermionic theory;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
10/1/1980 12:00:00 AM
DOI :
10.1049/ip-i-1.1980.0050
