DocumentCode
3558149
Title
Computer technique for solving schottky barrier from dark forward current-voltage characteristics
Author
Boutrit, C. ; Georges, J.C. ; Ravelet, S.
Author_Institution
Universit?ƒ?© de Nancy I, ISIN, Laboratoire d´´Electronique et de Physique des Interfaces, Vandoeuvre-l?ƒ??s-Nancy, France
Volume
127
Issue
5
fYear
1980
fDate
10/1/1980 12:00:00 AM
Firstpage
250
Lastpage
252
Abstract
The paper describes a computer technique for determining series resistance, shunt conductance, saturation current, ideality factor, and hence the apparent barrier height of metal-semiconductor devices from dark forward current characteristics using a least-squares fitting of experimental measurements with a theoretical model. The model used is based on the thermionic theory, incorporating both series and shunt resistance effects.
Keywords
Schottky effect; least squares approximations; semiconductor device models; semiconductor-metal boundaries; barrier height; computer technique; dark forward current characteristics; ideality factor; least squares approximations; metal semiconductor devices; saturation current; series resistance; shunt conductance; thermionic theory;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
10/1/1980 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1980.0050
Filename
4642518
Link To Document