DocumentCode
3558150
Title
Device and circuit trends in gigabit logic
Author
Bosch, B.G.
Author_Institution
Ruhr Universit?ƒ??t Bochum, Institut f?ƒ??r Elektronik, Bochum, West Germany
Volume
127
Issue
5
fYear
1980
fDate
10/1/1980 12:00:00 AM
Firstpage
254
Lastpage
265
Abstract
Recent implementations of Gbs¿1 integrated circuits are mentioned and used as the basis for a capability projection of the more promising technologies. After first describing the projection strategy, both the silicon and GaAs circuit families are assessed with regard to their performance limits. A shorter analysis of Josephson technology follows. For scaled down devices in silicon as well as several GaAs technologies, potential l.s.i. solutions with 2¿3 GHz clock frequencies are prognosticated. The 3¿6 GHz range should eventually be accessible to m.s.i. d.m.e.s.f.e.t. circuits, whereas GaAs s.d.f.l., j.f.e.t. and e.m.e.s.f.e.t. approaches promise v.l.s.i. complexity between 1 and 3 GHz. The range around 10 GHz appears to be solely a future domain of Josephson circuits (up to v.l.s.i).
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; integrated circuit technology; integrated logic circuits; large scale integration; silicon; superconducting junction devices; G bit logic; GaAs; II-V semiconductor; Josephson technology; LSI; MESFET; Si; elemental semiconductors; gigabit logic; integrated circuits;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
10/1/1980 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1980.0052
Filename
4642520
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