• DocumentCode
    3558151
  • Title

    Gallium arsenide review: past, present and future

  • Author

    Taylor, D.M. ; Wilson, D.O. ; Phillips, D.H.

  • Author_Institution
    Lockheed, Microelectronics Center, Sunnyvale, USA
  • Volume
    127
  • Issue
    5
  • fYear
    1980
  • fDate
    10/1/1980 12:00:00 AM
  • Firstpage
    266
  • Lastpage
    269
  • Abstract
    The tremendous growth of communications systems in recent years has put a demand on the electronics industry to provide higher speed integrated circuits than are currently available with today´s silicon technology. To help meet this demand, the electronics industry is developing new semiconductor materials such as gallium arsenide which already report clock frequencies of 1-3 GHz in GaAs integrated circuits. There have been many exciting breakthroughs in GaAs technology in the last five years including ion implantation techniques, annealing, lithography, circuit design, GaAs materials, and GaAs i.c. testing. Within the next five years GaAs is forecast to be a dominant technology in many high speed applications.
  • Keywords
    III-V semiconductors; gallium arsenide; monolithic integrated circuits; reviews; GaAs; III-V semiconductor; annealing; circuit design; integrated circuits; ion implantation techniques; lithography;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    10/1/1980 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1980.0053
  • Filename
    4642521