DocumentCode
3558151
Title
Gallium arsenide review: past, present and future
Author
Taylor, D.M. ; Wilson, D.O. ; Phillips, D.H.
Author_Institution
Lockheed, Microelectronics Center, Sunnyvale, USA
Volume
127
Issue
5
fYear
1980
fDate
10/1/1980 12:00:00 AM
Firstpage
266
Lastpage
269
Abstract
The tremendous growth of communications systems in recent years has put a demand on the electronics industry to provide higher speed integrated circuits than are currently available with today´s silicon technology. To help meet this demand, the electronics industry is developing new semiconductor materials such as gallium arsenide which already report clock frequencies of 1-3 GHz in GaAs integrated circuits. There have been many exciting breakthroughs in GaAs technology in the last five years including ion implantation techniques, annealing, lithography, circuit design, GaAs materials, and GaAs i.c. testing. Within the next five years GaAs is forecast to be a dominant technology in many high speed applications.
Keywords
III-V semiconductors; gallium arsenide; monolithic integrated circuits; reviews; GaAs; III-V semiconductor; annealing; circuit design; integrated circuits; ion implantation techniques; lithography;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
10/1/1980 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1980.0053
Filename
4642521
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