DocumentCode
3558154
Title
Low pinch-off voltage f.e.t. logic (l.p.f.l.): I.s.i. oriented logic approach using quasinormally off GaAs m.e.s.f.e.t.s.
Author
Nuzillat, G. ; Damay-Kavala, F. ; Bert, G. ; Arnodo, C.
Author_Institution
Thomson-CSF, Laboratoire Central de Recherches, Paris, France
Volume
127
Issue
5
fYear
1980
fDate
10/1/1980 12:00:00 AM
Firstpage
287
Lastpage
296
Abstract
A new l.s.i. oriented logic approach, low pinch-off voltage f.e.t. logic (l.p.f.l.), leading to highly versatile logic gates capable of combining high speed and low power consumption and requiring a standard fabrication process, is introduced and structures of complex logic gates realisable with this approach are described. Furthermore, a tentative comparison of the l.p.f.l. approach with other m.e.s.f.e.t. logic approaches to date is presented to show their respective design trade-offs which dictate the range of applications open to each of these approaches. The comparison is based on both computer simulations and experimental measurements on test circuits such as ring oscillators, flip-flops and binary frequency dividers.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated logic circuits; large scale integration; GaAs MESFET; LSI oriented logic approach; binary frequency dividers; flip flops; logic gates; low pinch off voltage FET logic; ring oscillators;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
10/1/1980 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1980.0056
Filename
4642524
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