• DocumentCode
    3558154
  • Title

    Low pinch-off voltage f.e.t. logic (l.p.f.l.): I.s.i. oriented logic approach using quasinormally off GaAs m.e.s.f.e.t.s.

  • Author

    Nuzillat, G. ; Damay-Kavala, F. ; Bert, G. ; Arnodo, C.

  • Author_Institution
    Thomson-CSF, Laboratoire Central de Recherches, Paris, France
  • Volume
    127
  • Issue
    5
  • fYear
    1980
  • fDate
    10/1/1980 12:00:00 AM
  • Firstpage
    287
  • Lastpage
    296
  • Abstract
    A new l.s.i. oriented logic approach, low pinch-off voltage f.e.t. logic (l.p.f.l.), leading to highly versatile logic gates capable of combining high speed and low power consumption and requiring a standard fabrication process, is introduced and structures of complex logic gates realisable with this approach are described. Furthermore, a tentative comparison of the l.p.f.l. approach with other m.e.s.f.e.t. logic approaches to date is presented to show their respective design trade-offs which dictate the range of applications open to each of these approaches. The comparison is based on both computer simulations and experimental measurements on test circuits such as ring oscillators, flip-flops and binary frequency dividers.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated logic circuits; large scale integration; GaAs MESFET; LSI oriented logic approach; binary frequency dividers; flip flops; logic gates; low pinch off voltage FET logic; ring oscillators;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    10/1/1980 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1980.0056
  • Filename
    4642524