Title :
Quasistatic and nonequilibrium phenomena in m.o.s. structures under the influence of a constant gate-current bias
Author :
Allman, P.G.C. ; Simmons, J.G.
Author_Institution :
University of Durham, Department of Applied Physics and Electronics, Durham, UK
fDate :
12/1/1980 12:00:00 AM
Abstract :
An experimental investigation is undertaken into the quasistatic and nonequilibrium response of an m.o.s. system to a constant gate-current bias. For the quasistatic condition, it is shown that the inverse total semiconductor capacitance can be extracted directly, in contrast to the slow-ramp quasistatic C/V measurement. Under nonequilibrium conditions the main aim has been to investigate the effect on the characteristics of current magnitude and temperature. The nonequilibrium characteristics are rich in structure and yield useful information on bulk-trap generation rate and interface trap emission.
Keywords :
electron traps; interface electron states; metal-insulator-semiconductor structures; MOS structures; constant gate current bias; current magnitude effect; interface trap emission; inverse total semiconductor capacitance; link trap generation rate; nonequilibrium response; quasistatic phenomenon; temperature effect;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
12/1/1980 12:00:00 AM
DOI :
10.1049/ip-i-1.1980.0061
