Title :
Switching properties of inversion-controlled metal-thin insulator -Si(n)-Si(p+) devices
Author :
Sarrabayrouse, G. ; Buxo, J. ; Sebaa, J.-P. ; Essaid, A.
Author_Institution :
Centre National de la Recherche Scientifique, Laboratoire d´´Automatique et d´´Analyse des Syst?ƒ??mes, Toulouse, France
fDate :
4/1/1981 12:00:00 AM
Abstract :
The paper discusses the physical conditions that must be fulfilled for switching to occur in metal-thin insulator-Si(n)-Si(p+) devices. It is shown that a necessary condition for the switching to occur is that the silicon surface at the insulator-semiconductor interface is inverted whatever is the originating mechanism that causes switching. Theoretical conclusions agree with experimental results.
Keywords :
metal-insulator-semiconductor devices; semiconductor switches; inversion-controlled metal-thin insulator-Si(n)-Si(p+) devices; switching properties;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1981 12:00:00 AM
DOI :
10.1049/ip-i-1.1981.0019
