Title :
Modelling the optical mis thyristor
Author :
Habib, S.E.-D. ; Eltoukhy, A.A.
Author_Institution :
Cairo University, Electronics & Communications Department, Faculty of Engineering, Cairo, Egypt
fDate :
4/1/1981 12:00:00 AM
Abstract :
The equivalence between the electrical and optical injection in the MIS thyristor (MIST) is established. Consequently, this equivalence is utilised to study the response of the device to wavelength and amplitude variations of the incident optical radiation. Compared with the punchthrough mode of operation of the MIST, the avalanche mode promises a higher sensitivity of the switching voltage to light, in addition to a better short-wavelength response.
Keywords :
metal-insulator-semiconductor devices; photoconducting devices; semiconductor device models; thyristors; avalanche mode; modelling; optical MIS thyristor; optical radiation; punchthrough mode;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1981 12:00:00 AM
DOI :
10.1049/ip-i-1.1981.0020
