DocumentCode
3558169
Title
Modelling the optical mis thyristor
Author
Habib, S.E.-D. ; Eltoukhy, A.A.
Author_Institution
Cairo University, Electronics & Communications Department, Faculty of Engineering, Cairo, Egypt
Volume
128
Issue
2
fYear
1981
fDate
4/1/1981 12:00:00 AM
Firstpage
58
Lastpage
60
Abstract
The equivalence between the electrical and optical injection in the MIS thyristor (MIST) is established. Consequently, this equivalence is utilised to study the response of the device to wavelength and amplitude variations of the incident optical radiation. Compared with the punchthrough mode of operation of the MIST, the avalanche mode promises a higher sensitivity of the switching voltage to light, in addition to a better short-wavelength response.
Keywords
metal-insulator-semiconductor devices; photoconducting devices; semiconductor device models; thyristors; avalanche mode; modelling; optical MIS thyristor; optical radiation; punchthrough mode;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
4/1/1981 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1981.0020
Filename
4642556
Link To Document