Title :
Proton-induced X-ray emission studies of generation impurities in silicon
Author :
Golja, B. ; Nassibian, A.G. ; Cohen, D.
Author_Institution :
University of Western Australia, Department of Electrical & Electronic Engineering, Perth, Australia
fDate :
4/1/1981 12:00:00 AM
Abstract :
In the paper we consider how proton-induced X-ray emission (PIXE), using high-energy protons (MeV), can be used as a nondestructive technique for studying impurities in silicon. The basic principles behind PIXE are presented and the PIXE system used is described. Concentrations of various impurities observed in silicon wafers have been determined and comparisons made with the spectrum obtained with the Rutherford backscattering technique.
Keywords :
elemental semiconductors; impurity distribution; ion microprobe analysis; silicon; Rutherford backscattering technique; Si; elemental semiconductor; generation impurities; nondestructive technique; proton induced X-ray emission studies;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1981 12:00:00 AM
DOI :
10.1049/ip-i-1.1981.0022
