Title :
Circuit switching analysis for optically excited metal-insulator (tunnel)-silicon thyristor (MIST)
Author :
Moustakas, S. ; Dell, J.M. ; Calligaro ; Nassibian, A.G. ; Hullett, J.L.
Author_Institution :
University of Western Australia, Department of Electrical & Electronic Engineering, Perth, Australia
fDate :
6/1/1981 12:00:00 AM
Abstract :
A simple equivalent circuit is employed to model the optically induced switching conditions of the MIST, thereby permitting the delay time, rise time and fall time to be calculated. The model also enables easy examination of the dependence of the MIST´s transient behaviour to both optical power overdrive and device capacitance and resistance. Experimental verification of the theory is undertaken.
Keywords :
equivalent circuits; metal-insulator-semiconductor devices; photoelectric devices; semiconductor device models; semiconductor switches; thyristors; capacitance; circuit switching analysis; delay time; equivalent circuit; fall time; model; optical power overdrive; optically induced metal-insulator-Si thyristor; resistance; rise time; semiconductor device models; transient behaviour;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
6/1/1981 12:00:00 AM
DOI :
10.1049/ip-i-1.1981.0027
