Title :
Characterisation of ion-implanted layers for GAAS FETs
Author :
Bujatti, M. ; Marcelja, F.
Author_Institution :
Selenia S.p.A., Research Department, Roma, Italy
fDate :
6/1/1981 12:00:00 AM
Abstract :
The problem of measuring very steep doping profiles, of the type usually present in ion-implanted GaAs FETs, is critically examined in the light of numerical solutions of the Poisson equation for some typical layers. It is found that the most popular techniques (C/V and saturation-current measurements) may be quite misleading or, at least, appreciable corrections are typically required.
Keywords :
III-V semiconductors; doping profiles; field effect transistors; gallium arsenide; ion implantation; solid-state microwave devices; C-V measurements; GaAs FETs; III-V semiconductor; Poisson equation; characterisation; doping profiles; ion-implanted layers; microwave FET; numerical solutions; saturation-current measurements;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
6/1/1981 12:00:00 AM
DOI :
10.1049/ip-i-1.1981.0028
