• DocumentCode
    3558192
  • Title

    Photovoltaic properties of cadmium-telluride/langmuir-film solar cells

  • Author

    Roberts, G.G. ; Petty, M.C. ; Dharmadasa, I.M.

  • Author_Institution
    University of Durham, Department of Applied Physics & Electronics, Durham, UK
  • Volume
    128
  • Issue
    6
  • fYear
    1981
  • fDate
    12/1/1981 12:00:00 AM
  • Firstpage
    197
  • Lastpage
    201
  • Abstract
    We report the properties of metal-insulator-semiconductor (MIS) solar cells based on n-type CdTe and an anthracene derivative deposited by the Langmuir-Blodgett technique. The incorporation of the organic insulating layer between a gold electrode and the CdTe is found to increase both the effective barrier height of the device measured in the dark and also the open-circuit voltage measured under illumination conditions. The Langmuir-Blodgett deposition technique has allowed us to investigate, in some detail, the dependence of these characteristics on the thickness of the insulating layer. The optimum efficiency of our devices occurs when theorganic film thickness is approximately 2.4nm.
  • Keywords
    II-VI semiconductors; Langmuir films; cadmium compounds; metal-insulator-semiconductor devices; photovoltaic effects; solar cells; CdTe-Langmuir film solar cell; Langmuir-Blodgett technique; MIS solar cell; anthracene derivative; effective barrier height; n-type CdTe; open-circuit voltage; organic insulating layer; photovoltaic properties;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    12/1/1981 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1981.0049
  • Filename
    4642589