DocumentCode
3558192
Title
Photovoltaic properties of cadmium-telluride/langmuir-film solar cells
Author
Roberts, G.G. ; Petty, M.C. ; Dharmadasa, I.M.
Author_Institution
University of Durham, Department of Applied Physics & Electronics, Durham, UK
Volume
128
Issue
6
fYear
1981
fDate
12/1/1981 12:00:00 AM
Firstpage
197
Lastpage
201
Abstract
We report the properties of metal-insulator-semiconductor (MIS) solar cells based on n-type CdTe and an anthracene derivative deposited by the Langmuir-Blodgett technique. The incorporation of the organic insulating layer between a gold electrode and the CdTe is found to increase both the effective barrier height of the device measured in the dark and also the open-circuit voltage measured under illumination conditions. The Langmuir-Blodgett deposition technique has allowed us to investigate, in some detail, the dependence of these characteristics on the thickness of the insulating layer. The optimum efficiency of our devices occurs when theorganic film thickness is approximately 2.4nm.
Keywords
II-VI semiconductors; Langmuir films; cadmium compounds; metal-insulator-semiconductor devices; photovoltaic effects; solar cells; CdTe-Langmuir film solar cell; Langmuir-Blodgett technique; MIS solar cell; anthracene derivative; effective barrier height; n-type CdTe; open-circuit voltage; organic insulating layer; photovoltaic properties;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
12/1/1981 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1981.0049
Filename
4642589
Link To Document