Title :
Metal-semiconductor contacts
Author_Institution :
University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK
fDate :
2/1/1982 12:00:00 AM
Abstract :
A review is given of our present knowledge of metal-semiconductor contacts. Topics covered include the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance. A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made with p-n junctions.
Keywords :
Schottky-barrier diodes; ohmic contacts; reviews; semiconductor-metal boundaries; Schottky barrier; capacitance; current/voltage characteristics; metal-semiconductor contacts; p-n junctions; review;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
2/1/1982 12:00:00 AM
DOI :
10.1049/ip-i-1.1982.0001
