Title :
Noise figure for mesfet with delta-function doping profile
Author :
Maxfield, N.P. ; Stitch, J.E. ; Robson, Prof P N
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, sheffield, UK
fDate :
4/1/1982 12:00:00 AM
Abstract :
The minimum noise figure for a MESFET with a delta-function doping profile along the substrate interface is calculated using an analytical method and a two-dimensional computer simulation. The results are compared with similar results obtained for a uniformly doped device. For typical GaAs FETs the minimum noise figure is not improved. However, at the minimum noise point the transconductance is higher, compensating for the increased source-gate capacitance there.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; semiconductor device models; GaAs FETs; MESFET; analytical method; analytical model; delta-function doping profile; minimum noise figure; source-gate capacitance; transconductance; two-dimensional computer simulation;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1982 12:00:00 AM
DOI :
10.1049/ip-i-1.1982.0006
