Novel p-n junction polysilicon dual-gate mosfet for analogue applications

Fabrication details and experimental data are given for a dual-input-gate p-channel enhancementmode MOSFET, which can be used for analogue applications. The device employs a novel gate structure in which a single-level polysilicon gate is laterally segmented along the channel length by means of alternate p+ and n+ doping, thus considerably simplifying the technology. It is proposed that the outer gates be used as the input terminals. Both practical and theoretical results for the static output characteristics are given, together with the relevant AC parameters, e.g. the forward conductance of the two gates and the input impedance between the gate terminals. Satisfactory w-channel devices, with n+-p+-n+ segmented gates, were also fabricated, and data from these are also given.