Electrical and optical equivalence of switching in v-groove punch-through-mode mist

The V-gioove punch-through-mode metal-insulator (tunnel)-silicon thyristor (MIST) is examined under electrical and optical base simulation. Electrical switching was obtained by base current injection and optical switching by 0.6328 ¿m radiation. Using a simple model, modified to take into account area effects and optical excitation, it is shown that the electrically and optically switched MIST are mutually equivalent, thus verifying the conclusions derived from a recent theoretical study.