Title :
Bistable operation and spectral tuning of injection laser with external dispersive cavity
Author :
Bazhenov, V.Yu. ; Bogatov, A.P. ; Eliseev, P.G. ; Okhotnikov, O.G. ; Pakf, G.T. ; Rakhvalsky, M.P. ; Soskin, M.S. ; Taranenko, V.B. ; Khairetdinov, K.A.
Author_Institution :
Ukranian Academy of Sciences, Institute of Physics, Kiev, USSR
fDate :
4/1/1982 12:00:00 AM
Abstract :
Spectral tuning of an AlGaAs-GaAs laser with external dispersive cavity, operating in a singlefrequency regime, has been studied. The dependence of output power on wavelength was shown to have the shape of a hysteresis loop, which indicates the existence of bistable operation. Such a behaviour in a laser is due to the existence of a composite cavity comprised of a laser-diode intrinsic cavity and an external dispersive cavity. The refractive index of a semiconductor medium depends on the inversion population, and, since the inversion population depends on the radiation intensity this causes optical nonlinearity of the active diode region. As a result, such an optical laser scheme becomes analogous to the well known optical bistable systems, including a Fabry-Perot interferometer with optical nonlinearity.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser tuning; optical bistability; semiconductor junction lasers; AlGaAs-GaAs laser; bistable operation; composite cavity; external dispersive cavity; hysteresis loop; injection laser; inversion population; laser-diode intrinsic cavity; optical nonlinearity; refractive index; semiconductor; spectral tuning;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1982 12:00:00 AM
DOI :
10.1049/ip-i-1.1982.0017