Title :
Depth inhomogeneity of CVD Si3N4 layers
Author :
T????tt????, P. ; Stubnya, G. ; Horv????th, Zs.J.
Author_Institution :
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, Hungary
fDate :
6/1/1982 12:00:00 AM
Abstract :
The potential distribution, the effective resistivity and the etch rate of the Si3 N4 layers have been studied as a function of the nitride thickness in bevelled etched MNOS structures. An unexpectedly high level of nonuniformity has been found in thin (< 70 nm) nitride layers. This level strongly depends on the annealing conditions and may be connected with the inhomogeneous depth distribution of Si¿H, N¿H groups and dangling silicon bonds.
Keywords :
CVD coatings; electronic conduction in insulating thin films; etching; insulating thin films; metal-insulator-semiconductor structures; silicon compounds; CVD Si3N4 layers; N-H groups; Si-H groups; bevelled etched MNOS structures; dangling Si bonds; effective resistivity; etch rate; inhomogeneous depth distribution; nitride thickness; potential distribution;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
6/1/1982 12:00:00 AM
DOI :
10.1049/ip-i-1.1982.0022
