Title :
GaAs/GaAlAs p-n-p-n negative-resistance laser with low threshold current density
Author :
Shou-Wu, Wang ; Rong-han, Wu ; Qi-gao, Zhu ; Qian-Sheng, Zhang ; Zhao-yin, Li ; Hui-Liong, Tian
Author_Institution :
Academia Sinica, Institute of Semiconductors of Sciences, Beijing, China
fDate :
12/1/1982 12:00:00 AM
Abstract :
Six-layer heterostructure p-n-p-n switching lasers with low lasing threshold current densities (2500 A cm¿2 at room temperature) and good electrical turn-on properties have been produced. The paper deals with the analysis and practical realisation of good switching characteristics and the trade-offs necessary to achieve them while maintaining low threshold-current densities.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; negative resistance; semiconductor junction lasers; GaAs/GaAlAs p-n-p-n negative-resistance laser; electrical turn-on properties; heterostructure p-n-p-n switching lasers; low threshold current density; semiconductor laser;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
12/1/1982 12:00:00 AM
DOI :
10.1049/ip-i-1.1982.0063
