Title :
Two-dimensional finite-element simulation of a permeable-base transistor
Author :
Marty, A. ; Clarac, J. ; Bailbe, J.P. ; Rey, G.
Author_Institution :
Centre National de la Recherche Scientifique, Laboratoire d´´Automatique et d´´Analyse des Syst?ƒ??mes, Toulouse, France
fDate :
2/1/1983 12:00:00 AM
Abstract :
Permeable-base-transistor modelling in two dimensions by the finite-element method is reported. The results of the applications presented demonstrate the capabilities of this simulation.
Keywords :
bipolar transistors; finite element analysis; semiconductor device models; I-V characteristics; PBT; current gains; cut-off frequency; electrical characteristics; finite element method; geometrical parameter; impurity concentration; model; numerical simulation; permeable-base transistor; transconductance; two-dimensional analysis;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
2/1/1983 12:00:00 AM
DOI :
10.1049/ip-i-1.1983.0005
