DocumentCode
3558253
Title
Two-dimensional finite-element simulation of a permeable-base transistor
Author
Marty, A. ; Clarac, J. ; Bailbe, J.P. ; Rey, G.
Author_Institution
Centre National de la Recherche Scientifique, Laboratoire d´´Automatique et d´´Analyse des Syst?ƒ??mes, Toulouse, France
Volume
130
Issue
1
fYear
1983
fDate
2/1/1983 12:00:00 AM
Firstpage
24
Lastpage
28
Abstract
Permeable-base-transistor modelling in two dimensions by the finite-element method is reported. The results of the applications presented demonstrate the capabilities of this simulation.
Keywords
bipolar transistors; finite element analysis; semiconductor device models; I-V characteristics; PBT; current gains; cut-off frequency; electrical characteristics; finite element method; geometrical parameter; impurity concentration; model; numerical simulation; permeable-base transistor; transconductance; two-dimensional analysis;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
2/1/1983 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1983.0005
Filename
4642672
Link To Document