Title :
Comparison between two-dimensional short-channel MOSFET models
Author_Institution :
Indian Institute of Technology, Department of Electrical Engineering, New Dehli, India
fDate :
2/1/1983 12:00:00 AM
Abstract :
The miniaturisation of MOSFETs in MOS LSI to achieve high packing density, high speed, low cost and an ultra high performance has led to the development of very-short-channel MOS devices. This has given rise to several important small-geometry effects on MOSFET characteristics which cannot be described by the conventional one-dimensional analysis. A comprehensive review is presented of the various approaches aimed at two-dimensional modelling of these devices.
Keywords :
field effect integrated circuits; insulated gate field effect transistors; large scale integration; reviews; semiconductor device models; MOS LSI; review; short-channel MOSFET models; small-geometry effects; two-dimensional modelling;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
2/1/1983 12:00:00 AM
DOI :
10.1049/ip-i-1.1983.0008
