• DocumentCode
    3558258
  • Title

    Modified strong-inversion potential for accurate modelling of long-channel MOS transistors

  • Author

    Stenberg, L.J.

  • Author_Institution
    Technical University of Denmark, Laboratory for Semiconductor Technology, Electronics Institute, Lyngby, Denmark
  • Volume
    130
  • Issue
    2
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    57
  • Lastpage
    60
  • Abstract
    In long-channel MOS transistor modelling, the classical strong-inversion surface potential ¿S,i (y1=2¿F+V(y), where ¿F denotes the Fermi potential of the bulk material and V(y) the local potential in the channel with respect to the source electrode, is widely used. It is demonstrated in the paper that this expression for the surface potential in strong inversion may be inaccurate in certain cases, and therefore a new and more accurate strong-inversion surface potential is derived and discussed in connection with a modified long-channel MOS transistor model.
  • Keywords
    insulated gate field effect transistors; inversion layers; semiconductor device models; surface potential; Fermi potential; MOSFET; local potential; long-channel MOS transistors; model; strong-inversion surface potential;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    4/1/1983 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1983.0013
  • Filename
    4642681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3558258