Title :
Modified strong-inversion potential for accurate modelling of long-channel MOS transistors
Author_Institution :
Technical University of Denmark, Laboratory for Semiconductor Technology, Electronics Institute, Lyngby, Denmark
fDate :
4/1/1983 12:00:00 AM
Abstract :
In long-channel MOS transistor modelling, the classical strong-inversion surface potential ¿S,i (y1=2¿F+V(y), where ¿F denotes the Fermi potential of the bulk material and V(y) the local potential in the channel with respect to the source electrode, is widely used. It is demonstrated in the paper that this expression for the surface potential in strong inversion may be inaccurate in certain cases, and therefore a new and more accurate strong-inversion surface potential is derived and discussed in connection with a modified long-channel MOS transistor model.
Keywords :
insulated gate field effect transistors; inversion layers; semiconductor device models; surface potential; Fermi potential; MOSFET; local potential; long-channel MOS transistors; model; strong-inversion surface potential;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1983 12:00:00 AM
DOI :
10.1049/ip-i-1.1983.0013
