Title :
Power MOSFET dynamic large-signal model
Author_Institution :
University of Melbourne, Department of Electrical Engineering, Melbourne, Australia
fDate :
4/1/1983 12:00:00 AM
Abstract :
A large-signal dynamic circuit model for the double-diffused vertical power MOSFET is reported. The model is physically based and its parameters are readily determined from static curve tracer measurements and small-signal measurements using simple data-reduction techniques. The equivalent circuit can be implemented in general purpose nonlinear circuit analysis computer programs, such as SPICE 2, for use in the analysis and design of switching circuits. The accuracy of the model is verified by the excellent correlation obtained between detailed simulated and measured switching characteristics on an experimental high-speed switching circuit.
Keywords :
equivalent circuits; insulated gate field effect transistors; power transistors; semiconductor device models; DMOS structure; SPICE 2; data-reduction techniques; double-diffused vertical power MOSFET; equivalent circuit; large-signal dynamic circuit model; nonlinear circuit analysis computer programs; static curve tracer measurements; switching circuits;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1983 12:00:00 AM
DOI :
10.1049/ip-i-1.1983.0018
