Power MOSFET dynamic large-signal model

Author

Minasian, R.A.

Author_Institution

University of Melbourne, Department of Electrical Engineering, Melbourne, Australia

Volume

130

Issue

2

fYear

1983

fDate

4/1/1983 12:00:00 AM

Firstpage

73

Lastpage

79

Abstract

A large-signal dynamic circuit model for the double-diffused vertical power MOSFET is reported. The model is physically based and its parameters are readily determined from static curve tracer measurements and small-signal measurements using simple data-reduction techniques. The equivalent circuit can be implemented in general purpose nonlinear circuit analysis computer programs, such as SPICE 2, for use in the analysis and design of switching circuits. The accuracy of the model is verified by the excellent correlation obtained between detailed simulated and measured switching characteristics on an experimental high-speed switching circuit.

Keywords

equivalent circuits; insulated gate field effect transistors; power transistors; semiconductor device models; DMOS structure; SPICE 2; data-reduction techniques; double-diffused vertical power MOSFET; equivalent circuit; large-signal dynamic circuit model; nonlinear circuit analysis computer programs; static curve tracer measurements; switching circuits;

fLanguage

English

Journal_Title

Solid-State and Electron Devices, IEE Proceedings I

Publisher

iet

Conference_Location

4/1/1983 12:00:00 AM

ISSN

0143-7100

Type

jour

DOI

10.1049/ip-i-1.1983.0018

Filename

4642686