Title :
Measurement of thermal transients in semiconductor power devices and circuits
Author_Institution :
University of Birmingham, Wolfson Semiconductor Laboratory, Department of Electronic & Electrical Engineering, Birmingham, UK
fDate :
8/1/1983 12:00:00 AM
Abstract :
A method for measuring microsecond thermal transients in devices and circuits is described and used to study the behaviour of commercially available low power (1 W) transistors. The results are used to demonstrate the usefulness of the method and show some agreement with previously published theoretical data. Hot spots which move from site to site on interdigitated bipolar transistor structures have been observed. The form of the thermal transient is dependent on the values of collector current and voltage, and the site of eventual breakdown of the device depends on these two quantitites.
Keywords :
integrated circuit testing; power transistors; semiconductor device testing; semiconductor devices; thermal variables measurement; transients; breakdown; collector current; collector voltage; hot spots; interdigitated bipolar transistor structures; microsecond thermal transients; semiconductor device testing; semiconductor power devices; thermal variables measurement;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
8/1/1983 12:00:00 AM
DOI :
10.1049/ip-i-1.1983.0028
