Title :
Mott-barrier mixer diodes with improved semiconductor profiles for cooled operation at submillimetre wavelengths
Author_Institution :
Max-Planck-Institut f?ƒ??r Radioastronomie, Bonn, West Germany
fDate :
8/1/1983 12:00:00 AM
Abstract :
The use of thick, low-doped epitaxial profiles permits lower noise, lower capacitance Mott-barrier mixer diodes to be fabricated without complicating diode manufacturing technology. The paper reports model predictions for metal-GaAs diodes made from such materials.
Keywords :
III-V semiconductors; Schottky-barrier diodes; doping profiles; gallium arsenide; mixers (circuits); semiconductor device models; GaAs; III-V semiconductors; Mott-barrier mixer diodes; Schottky barrier diodes; cooled operation; depletion capacitance; doping profiles; low-doped epitaxial profiles; model predictions; semiconductor device fabrication; submillimetre wavelengths;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
8/1/1983 12:00:00 AM
DOI :
10.1049/ip-i-1.1983.0031
