Title :
Physical explanation of GaAs MESFET I/V characteristics
Author :
Ai-Mudares, M.A.R. ; Foulds, K.W.H.
Author_Institution :
University of Surrey, Department of Physics, Guildford, UK
fDate :
8/1/1983 12:00:00 AM
Abstract :
The steady-state behaviour of a 1017 cm¿3 doped planar GaAs MESFET is simulated using 2-dimensional numerical analysis. The effect of the active-layer thickness on the existence of the negative resisitance in the I/V characteristics is discussed and a simple physical explanationis given in terms of the rotation of the velocity vector. The effect of the substrate on the I/V characteristics is also discussed.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; negative resistance; semiconductor device models; semiconductor doping; 2-dimensional numerical analysis; GaAs MESFET; I/V characteristics; III-V semiconductors; active-layer thickness; negative resistance; semiconductor device models; semiconductor doping; steady-state behaviour; substrate;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
8/1/1983 12:00:00 AM
DOI :
10.1049/ip-i-1.1983.0032
