Title :
Modelling DC characteristics of dual-gate GaAs MESFETs
Author_Institution :
University of Melbourne, Department of Electrical Engineering, Melbourne, Australia
fDate :
8/1/1983 12:00:00 AM
Abstract :
An analytical DC nonlinear model for the dual-gate GaAs MESFET is reported. Explicit solutions for the internal voltages, the various operating modes and the overall output transfer characteristics are given in terms of the applied external voltages. The model representation is particularly efficient and its defining parameters are rapidly and simply evaluated directly from the data sheet. The validity of the model is verified by the very good correlation obtained between detailed simulated and experimental characteristics over a wide range of operating conditions, for a typical microwave dual-gate GaAs MESFET.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; solid-state microwave devices; DC characteristics; III-V semiconductors; Schottky gate FET; applied external voltages; dual-gate GaAs MESFET; nonlinear model; output transfer characteristics; solid-state microwave devices;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
8/1/1983 12:00:00 AM
DOI :
10.1049/ip-i-1.1983.0033
