DocumentCode
3558274
Title
Modelling DC characteristics of dual-gate GaAs MESFETs
Author
Minasian, R.A.
Author_Institution
University of Melbourne, Department of Electrical Engineering, Melbourne, Australia
Volume
130
Issue
4
fYear
1983
fDate
8/1/1983 12:00:00 AM
Firstpage
182
Lastpage
186
Abstract
An analytical DC nonlinear model for the dual-gate GaAs MESFET is reported. Explicit solutions for the internal voltages, the various operating modes and the overall output transfer characteristics are given in terms of the applied external voltages. The model representation is particularly efficient and its defining parameters are rapidly and simply evaluated directly from the data sheet. The validity of the model is verified by the very good correlation obtained between detailed simulated and experimental characteristics over a wide range of operating conditions, for a typical microwave dual-gate GaAs MESFET.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; solid-state microwave devices; DC characteristics; III-V semiconductors; Schottky gate FET; applied external voltages; dual-gate GaAs MESFET; nonlinear model; output transfer characteristics; solid-state microwave devices;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
8/1/1983 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1983.0033
Filename
4642703
Link To Document