DocumentCode
3558282
Title
Chemical-sensitive field-effect transistors
Author
Sibbald, A.
Author_Institution
University of Newcastle, Department of Physical Chemistry, Newcastle upon Tyne, UK
Volume
130
Issue
5
fYear
1983
fDate
10/1/1983 12:00:00 AM
Firstpage
233
Lastpage
244
Abstract
The integration of various types of semiconductor devices with particular electrochemically active thin films makes possible a new generation of integrated-circuit chemical microtransducers which have many important (and unique) advantages over their conventional antecedents, including small size, robust solid-state nature and the potential for low-cost mass-fabrication; attributes which are particularly appropriate for biomedical usage. The prime semiconductor device for such applications is the MIS transistor. first modified into an ion-sensitive (chemical-sensitive) field-effect transistor (ISFET, ChemFET) in 1970. The paper reviews the development of ChemFET devices since their inception, and describes the important aspects of their theory, structure and design with particular emphasis on the practical features of device operation. As an illustrative example, a novel triple-function chemical-sensing IC for the simultaneous measurement of K+, H+ and Ca2+ in aqueous solutions is described.
Keywords
chemical variables measurement; electric sensing devices; field effect integrated circuits; insulated gate field effect transistors; reviews; transducers; ChemFET devices; IGFET; ISFET; MIS transistor; biomedical transducers; chemical sensitive field-effect transistors; chemical-sensing IC; integrated-circuit chemical microtransducers; ion sensitive FET; reviews;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
10/1/1983 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1983.0042
Filename
4642713
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