• DocumentCode
    3558282
  • Title

    Chemical-sensitive field-effect transistors

  • Author

    Sibbald, A.

  • Author_Institution
    University of Newcastle, Department of Physical Chemistry, Newcastle upon Tyne, UK
  • Volume
    130
  • Issue
    5
  • fYear
    1983
  • fDate
    10/1/1983 12:00:00 AM
  • Firstpage
    233
  • Lastpage
    244
  • Abstract
    The integration of various types of semiconductor devices with particular electrochemically active thin films makes possible a new generation of integrated-circuit chemical microtransducers which have many important (and unique) advantages over their conventional antecedents, including small size, robust solid-state nature and the potential for low-cost mass-fabrication; attributes which are particularly appropriate for biomedical usage. The prime semiconductor device for such applications is the MIS transistor. first modified into an ion-sensitive (chemical-sensitive) field-effect transistor (ISFET, ChemFET) in 1970. The paper reviews the development of ChemFET devices since their inception, and describes the important aspects of their theory, structure and design with particular emphasis on the practical features of device operation. As an illustrative example, a novel triple-function chemical-sensing IC for the simultaneous measurement of K+, H+ and Ca2+ in aqueous solutions is described.
  • Keywords
    chemical variables measurement; electric sensing devices; field effect integrated circuits; insulated gate field effect transistors; reviews; transducers; ChemFET devices; IGFET; ISFET; MIS transistor; biomedical transducers; chemical sensitive field-effect transistors; chemical-sensing IC; integrated-circuit chemical microtransducers; ion sensitive FET; reviews;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    10/1/1983 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1983.0042
  • Filename
    4642713