• DocumentCode
    3558284
  • Title

    Langmuir-Blodgett electron-beam resists

  • Author

    Peterson, I.R.

  • Author_Institution
    University of Durham, Department of Applied Physics and Electronics, Durham, UK
  • Volume
    130
  • Issue
    5
  • fYear
    1983
  • fDate
    10/1/1983 12:00:00 AM
  • Firstpage
    252
  • Lastpage
    255
  • Abstract
    The Langmuir-Blodgett(LB) technique is a new way of applying resist to a substrate for microstructure fabrication. It provides a layer of much greater homogeneity and uniformity than is possible with conventional techniques, advantages expected to be of special importance in electron-beam lithography. The paper reviews work published in this field, which covers both positive- and negative-contrast materials. Several have characteristics which are competitive with those of existing resin resists, and chemical modifications are suggested for even greater improvement. New experimental results are presented, which show that the time required for application of an LB resist layer need not be incommensurate with that of other lithographic steps.
  • Keywords
    Langmuir films; electron resists; integrated circuit technology; reviews; Langmuir-Blodgett electron-beam resists; chemical modifications; electron-beam lithography; negative-contrast materials; positive-contrast materials; reviews;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    10/1/1983 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1983.0044
  • Filename
    4642715