DocumentCode :
3558284
Title :
Langmuir-Blodgett electron-beam resists
Author :
Peterson, I.R.
Author_Institution :
University of Durham, Department of Applied Physics and Electronics, Durham, UK
Volume :
130
Issue :
5
fYear :
1983
fDate :
10/1/1983 12:00:00 AM
Firstpage :
252
Lastpage :
255
Abstract :
The Langmuir-Blodgett(LB) technique is a new way of applying resist to a substrate for microstructure fabrication. It provides a layer of much greater homogeneity and uniformity than is possible with conventional techniques, advantages expected to be of special importance in electron-beam lithography. The paper reviews work published in this field, which covers both positive- and negative-contrast materials. Several have characteristics which are competitive with those of existing resin resists, and chemical modifications are suggested for even greater improvement. New experimental results are presented, which show that the time required for application of an LB resist layer need not be incommensurate with that of other lithographic steps.
Keywords :
Langmuir films; electron resists; integrated circuit technology; reviews; Langmuir-Blodgett electron-beam resists; chemical modifications; electron-beam lithography; negative-contrast materials; positive-contrast materials; reviews;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Publisher :
iet
Conference_Location :
10/1/1983 12:00:00 AM
ISSN :
0143-7100
Type :
jour
DOI :
10.1049/ip-i-1.1983.0044
Filename :
4642715
Link To Document :
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