DocumentCode
3558284
Title
Langmuir-Blodgett electron-beam resists
Author
Peterson, I.R.
Author_Institution
University of Durham, Department of Applied Physics and Electronics, Durham, UK
Volume
130
Issue
5
fYear
1983
fDate
10/1/1983 12:00:00 AM
Firstpage
252
Lastpage
255
Abstract
The Langmuir-Blodgett(LB) technique is a new way of applying resist to a substrate for microstructure fabrication. It provides a layer of much greater homogeneity and uniformity than is possible with conventional techniques, advantages expected to be of special importance in electron-beam lithography. The paper reviews work published in this field, which covers both positive- and negative-contrast materials. Several have characteristics which are competitive with those of existing resin resists, and chemical modifications are suggested for even greater improvement. New experimental results are presented, which show that the time required for application of an LB resist layer need not be incommensurate with that of other lithographic steps.
Keywords
Langmuir films; electron resists; integrated circuit technology; reviews; Langmuir-Blodgett electron-beam resists; chemical modifications; electron-beam lithography; negative-contrast materials; positive-contrast materials; reviews;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
10/1/1983 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1983.0044
Filename
4642715
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