DocumentCode
3558289
Title
Depletion mode MOSFET modelling for CAD
Author
Haque-Ahmed, Sufia ; Salama, C. Andre T
Author_Institution
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Volume
130
Issue
6
fYear
1983
fDate
12/1/1983 12:00:00 AM
Firstpage
281
Lastpage
286
Abstract
A simple CAD model for the I/V characteristics of long-channel depletion-mode MOSFETs is presented. The model is applicable to both shallow and deep channel devices and provides a complete set of characterisation equations for eachmode of operation. The model also enhances qualitative understanding of the device behaviour and provides direct correlation between the electrical characteristics and the physical, technological and geometrical design parameters of the MOSFETs. Good agreement between the simplified model and measured device characteristics justifies its validity.
Keywords
circuit CAD; insulated gate field effect transistors; semiconductor device models; CAD model; I/V characteristics; deep channel devices; long-channel depletion-mode MOSFETs; shallow channel devices;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
12/1/1983 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1983.0050
Filename
4642722
Link To Document