Title :
Depletion mode MOSFET modelling for CAD
Author :
Haque-Ahmed, Sufia ; Salama, C. Andre T
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
fDate :
12/1/1983 12:00:00 AM
Abstract :
A simple CAD model for the I/V characteristics of long-channel depletion-mode MOSFETs is presented. The model is applicable to both shallow and deep channel devices and provides a complete set of characterisation equations for eachmode of operation. The model also enhances qualitative understanding of the device behaviour and provides direct correlation between the electrical characteristics and the physical, technological and geometrical design parameters of the MOSFETs. Good agreement between the simplified model and measured device characteristics justifies its validity.
Keywords :
circuit CAD; insulated gate field effect transistors; semiconductor device models; CAD model; I/V characteristics; deep channel devices; long-channel depletion-mode MOSFETs; shallow channel devices;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
12/1/1983 12:00:00 AM
DOI :
10.1049/ip-i-1.1983.0050
