Title :
Theory of the triangular-barrier switch
Author :
Habib, S.E.-D. ; Board, K.
Author_Institution :
University College of Swansea, Department of Electrical & Electronic Engineering, Swansea, UK
fDate :
12/1/1983 12:00:00 AM
Abstract :
The recently observed, current controlled, negative resistance behaviour in a novel bulk GaAs structure is analysed using the basic charge neutrality and carrier transport equations. The structure is composed of a triangular barrier (TB) diode (formed by creating a plane of ionised impurities in the Crystal bulk using MBE) in the immediate vicinity of a p¿n junction in the same crystal. The switching phenomena in this `TB switch¿ is attributed to a regenerative feedback interaction between the p¿n junction and the TB diode. Simple closed-form expressions for the main device parameters are derived.
Keywords :
III-V semiconductors; gallium arsenide; negative resistance; semiconductor device models; semiconductor diodes; semiconductor switches; MBE; bulk GaAs structure; carrier transport equations; charge neutrality equations; current controlled negative resistance; ionised impurities; model; p-n junction; regenerative feedback interaction; semiconductor diode; triangular barrier diode; triangular-barrier switch;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
12/1/1983 12:00:00 AM
DOI :
10.1049/ip-i-1.1983.0052
