Theory of the triangular-barrier switch

Author

Habib, S.E.-D. ; Board, K.

Author_Institution

University College of Swansea, Department of Electrical & Electronic Engineering, Swansea, UK

Volume

130

Issue

6

fYear

1983

fDate

12/1/1983 12:00:00 AM

Firstpage

292

Lastpage

296

Abstract

The recently observed, current controlled, negative resistance behaviour in a novel bulk GaAs structure is analysed using the basic charge neutrality and carrier transport equations. The structure is composed of a triangular barrier (TB) diode (formed by creating a plane of ionised impurities in the Crystal bulk using MBE) in the immediate vicinity of a pÂ¿n junction in the same crystal. The switching phenomena in this `TB switchÂ¿ is attributed to a regenerative feedback interaction between the pÂ¿n junction and the TB diode. Simple closed-form expressions for the main device parameters are derived.

Keywords

III-V semiconductors; gallium arsenide; negative resistance; semiconductor device models; semiconductor diodes; semiconductor switches; MBE; bulk GaAs structure; carrier transport equations; charge neutrality equations; current controlled negative resistance; ionised impurities; model; p-n junction; regenerative feedback interaction; semiconductor diode; triangular barrier diode; triangular-barrier switch;

fLanguage

English

Journal_Title

Solid-State and Electron Devices, IEE Proceedings I

Publisher

iet

Conference_Location

12/1/1983 12:00:00 AM

ISSN

0143-7100

Type

jour

DOI

10.1049/ip-i-1.1983.0052

Filename

4642724