Title :
Single drift impatt diodes on diamond heat sinks for W-band frequencies
Author_Institution :
Fa. Rohde & Schwarz GmbH & Co. KG, Abt. 3 EMS, M?ƒ??nchen, West Germany
fDate :
4/1/1984 12:00:00 AM
Abstract :
High-power silicon pnn¿ impatt dioes have been fabricated by a simple diffusion process for operation on diamond heat sinks. The maximum outputpower of 0.5 W has been achieved at 90 GHz with diodes of 46 fim in diameter. Owingto the low thermal resistance of 11 K/W the corresponding junction temperature is considerably below 200°C.
Keywords :
IMPATT diodes; elemental semiconductors; heat sinks; silicon; 90 GHz; EHF; IMPATT diodes; Si; W-band frequencies; diamond heat sinks; diffusion process; elemental semiconductor; p+-n-n+; single drift device; solid-state microwave devices;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1984 12:00:00 AM
DOI :
10.1049/ip-i-1.1984.0016
