Title :
Calculation of amplification factor μ of static induced transistor
Author_Institution :
Nanjing Solid Stale Devices Research Institute, Nanjing, China
fDate :
6/1/1984 12:00:00 AM
Abstract :
This paper has analysed the amplification factor μ of a static induced transistor (SIT), summarised all the factors affecting μ and derived practical formulas. The calculated results agree well with experimental data.
Keywords :
junction gate field effect transistors; JFET; amplification factor; static induced transistor; Transistors, Semiconductor devices and materials;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
6/1/1984 12:00:00 AM
DOI :
10.1049/ip-i-1.1984.0025
