Dependence of the Schottky barrier height of GaP/polymer/Au diodes on the area per carboxylic acid group

Langmuir-Blodgett monolayers of derivatives of poly(styrene/maleic anhydride) were deposited on n-type gallium phosphide. The Schottky barrier height of the resulting devices was shown to depend on the area per carboxylic acid group at the semiconductor-insulator interface. The barrier height changes were attributed to an interfacial dipole layer formed by the reaction of the headgroups with the native oxide/hydroxide surface layer on the semiconductor.