DocumentCode
3558492
Title
The influence of an LIGBT on CMOS latch up in power integrated circuit
Author
Huang, Alex Q. ; Amaratunga, Gehan A J
Author_Institution
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume
42
Issue
10
fYear
1995
fDate
10/1/1995 12:00:00 AM
Firstpage
1873
Lastpage
1874
Abstract
The latch up characteristics of a CMOS adjacent to a high voltage lateral insulated gate bipolar transistor (LIGBT) have been experimentally investigated. While it has been found that the holding voltage and holding current of the CMOS do not strongly depend on the power device operation, the triggering voltage has been found to be critical to the power device operation.
Keywords
CMOS integrated circuits; insulated gate bipolar transistors; power integrated circuits; CMOS latch up; LIGBT; high voltage lateral insulated gate bipolar transistor; holding current; holding voltage; power device; power integrated circuit; triggering voltage; Automatic testing; CMOS logic circuits; CMOS technology; Circuit testing; Fabrication; Insulation; Latches; MOS devices; Power integrated circuits; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
Conference_Location
10/1/1995 12:00:00 AM
ISSN
0018-9383
Type
jour
DOI
10.1109/16.464404
Filename
464404
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