Title :
The influence of an LIGBT on CMOS latch up in power integrated circuit
Author :
Huang, Alex Q. ; Amaratunga, Gehan A J
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fDate :
10/1/1995 12:00:00 AM
Abstract :
The latch up characteristics of a CMOS adjacent to a high voltage lateral insulated gate bipolar transistor (LIGBT) have been experimentally investigated. While it has been found that the holding voltage and holding current of the CMOS do not strongly depend on the power device operation, the triggering voltage has been found to be critical to the power device operation.
Keywords :
CMOS integrated circuits; insulated gate bipolar transistors; power integrated circuits; CMOS latch up; LIGBT; high voltage lateral insulated gate bipolar transistor; holding current; holding voltage; power device; power integrated circuit; triggering voltage; Automatic testing; CMOS logic circuits; CMOS technology; Circuit testing; Fabrication; Insulation; Latches; MOS devices; Power integrated circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
Conference_Location :
10/1/1995 12:00:00 AM
