DocumentCode
3558503
Title
The base current degradation of poly-emitter BJTs under AC stress
Author
Hsu, Tsun-Lai ; Gong, Jeng ; Yu, Keh-Yuh
Author_Institution
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume
42
Issue
10
fYear
1995
fDate
10/1/1995 12:00:00 AM
Firstpage
1868
Lastpage
1871
Abstract
A simple model for the analysis of the ac stress effect in poly-emitter bipolar transistors is presented. Apart from the reverse-bias induced hot-carrier effects, the forward-bias recovery effect is a key factor under ac stress, it obviously suppresses the base current degradation of the device which is caused during the reverse-bias periods. In this work, we derived the relationship between the excess base current and the stress time for different ac stress conditions. This model is verified with experimental results.
Keywords
bipolar transistors; hot carriers; semiconductor device models; AC stress; BJTs; base current degradation; forward-bias; hot carriers; poly-emitter bipolar transistors; recovery; reverse-bias; Annealing; BiCMOS integrated circuits; Bipolar transistors; Degradation; Electric fields; Hot carrier effects; Microelectronics; Stress; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
Conference_Location
10/1/1995 12:00:00 AM
ISSN
0018-9383
Type
jour
DOI
10.1109/16.464406
Filename
464406
Link To Document