Noise suppression effect in an avalanche multiplication photodiode operating in a charge accumulation mode

A pixel configuration available to solid-state imagers using an avalanche multiplication photodiode operated in a charge accumulation mode, with each pixel as a photo-element, is proposed and stable avalanche multiplication gains over several tens are demonstrated by using a test circuit composed of discrete elements, equivalent to the pixel configuration. Moreover, it is found that the self-quenching effects inherent to the APD operating in this mode suppress the reset or avalanche induced excess noises, predominant in readout process and in charge accumulation process, respectively. These results are advantageous for a solid-state imager since the use of the avalanche multiplication simultaneously satisfies the two requirements of high sensitivity and wide dynamic range.