• DocumentCode
    3558652
  • Title

    Enhanced off-state leakage currents in n-channel MOSFETs with N2O-grown gate dielectric

  • Author

    Xu, Zeng ; Lai, P.T. ; Ng, W.T.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
  • Volume
    16
  • Issue
    10
  • fYear
    1995
  • Firstpage
    436
  • Lastpage
    438
  • Abstract
    This paper reports on the off-state drain (GIDL) and gate current (Ig) characteristics of n-channel MOSFETs using thin thermal oxide (OX), N/sub 2/O-nitrided oxide (N2ON), and N/sub 2/O-grown oxide (N20G) as gate dielectrics. Important phenomena observed in N20G devices are enhanced GIDL and Ig in the low-field region as compared to the OX and N20N devices. They are attributed to heavy-nitridation-induced junction leakage and shallow-electron-trap-assisted tunneling mechanisms, respectively. Therefore, N2ON oxide is superior to N20G oxide in leakage-sensitive applications.<>
  • Keywords
    MOSFET; dielectric thin films; electron traps; leakage currents; nitridation; semiconductor-insulator boundaries; tunnelling; N/sub 2/O-grown gate dielectric; Si-SiNO; gate dielectrics; heavy-nitridation-induced junction leakage; leakage-sensitive applications; n-channel MOSFET; nitrided oxide; offstate leakage currents; shallow-electron-trap-assisted tunneling mechanisms; thin thermal oxide; Boron; Dielectric devices; Dielectric measurements; Doping; Electrons; Hot carriers; Implants; Leakage current; MOSFET circuits; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.464809
  • Filename
    464809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3558652