New method to determine intrinsic and extrinsic base-collector capacitances of HBT´s using the Miller effect

Author

Kim, Yeong-Seuk ; Park, Sung-Ho ; Park, Moon-Pyung ; Song, Kie-Moon ; Park, Hyung-Moo

Author_Institution

Dept. of Semicond. Sci., Chung-Buk Nat. Univ., Cheongju, South Korea

Volume

16

Issue

10

fYear

1995

Firstpage

445

Lastpage

447

Abstract

A new method to determine intrinsic and extrinsic base-collector capacitances of HBT´s using the Miller effect is presented. The measured S-parameters of an HBT are calibrated and transformed into the ABCD-parameters. The fictitious input and output resistances are added to the HBT and total ABCD-parameters are calculated. The added output resistance degrades the frequency response of the overall network due to the Miller effect, which is used to extract intrinsic and extrinsic base-collector capacitances. The advantage of this method is that it does not require any special test structure.<>

Keywords

S-parameters; capacitance; equivalent circuits; frequency response; heterojunction bipolar transistors; semiconductor device models; ABCD-parameters; HBT; Miller effect; S-parameters; base-collector capacitances; frequency response; output resistance; Capacitance measurement; Circuit simulation; Circuit testing; Coupling circuits; Degradation; Electrical resistance measurement; Equivalent circuits; Frequency response; Heterojunction bipolar transistors; Scattering parameters;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.464812

Filename

464812