An InP HBT-Based Oscillator Monolithically Integrated With a Photodiode

Author

Shumakher, Evgeny ; Magrisso, Tsufit ; Kraus, Shraga ; Cohen-Elias, Doron ; Gavrilov, Arkady ; Cohen, Shimon ; Eisenstein, Gadi ; Ritter, Dan

Author_Institution

Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa

Volume

26

Issue

15

fYear

2008

Firstpage

2679

Lastpage

2683

Abstract

An indium phosphide heterojunction bipolar transistor (InP HBT) oscillator chip was monolithically integrated with an on chip p-i-n photodiode. A controllable locking range was obtained in unidirectional injection locking. High-purity optoelectronic oscillator with parasitic modes lower than -4 dBc resulted from bidirectional injection locking. The optoelectronic oscillator power consumption was 50 mW while providing output power of - 2 dBm . The overall chip size is 1.3 times 0.8 mm.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; injection locked oscillators; integrated optoelectronics; microwave oscillators; microwave photonics; monolithic integrated circuits; optical phase locked loops; p-i-n photodiodes; InP; InP HBT-based oscillator; bidirectional injection locking; controllable locking; indium phosphide heterojunction bipolar transistor; monolithic integration; on-chip p-i-n photodiode; optoelectronic oscillator; power 50 mW; unidirectional injection locking; Heterojunction bipolar transistors; Indium phosphide; Injection-locked oscillators; Microwave oscillators; Microwave photonics; Microwave technology; Monolithic integrated circuits; Optical distortion; Phase noise; Photodiodes; Heterojunction bipolar transistor (HBT); indium phosphide (InP); injection-locked oscillators; optical oscillators; optical phase locked loops; optoelectronic; photodiodes;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2008.927615

Filename

4652305