Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

Author

Cordier, Yvon ; Moreno, Jean-Christophe ; Baron, Nicolas ; Frayssinet, Eric ; Chenot, S?©bastien ; Damilano, Benjamin ; Semond, Fabrice

Author_Institution

Centre de Rech. su l´´Hetero-Epitaxie et ses Applic., Valbonne

Volume

29

Issue

11

fYear

2008

Firstpage

1187

Lastpage

1189

Abstract

The growth of AlGaN/GaN-based heterostructure on Si(110) substrates by molecular beam epitaxy using ammonia as the nitrogen precursor is reported. The structural, optical, and electrical properties of such heterostructure are assessed and are quite similar to the ones obtained on Si(111). A 2-D electron gas is formed at the Al_0.3Ga_0.7N/GaN interface with a sheet carrier density of 9.6 times 10¹² cm^-2 and a mobility of 1980 cm²/V middots at room temperature. Preliminary results concerning high-electron-mobility-transistor static characteristics are presented and compared with that of devices realized on other orientations of silicon.

Keywords

III-V semiconductors; aluminium compounds; carrier density; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; two-dimensional electron gas; wide band gap semiconductors; 2-D electron gas; Al_0.3Ga_0.7N-GaN; Si; Si(110) substrate; electrical property; gallium nitride heterostructure; high electron mobility transistor; molecular beam epitaxy; optical property; sheet carrier density; structural property; transistor static characteristics; Aluminum gallium nitride; Charge carrier density; Electron mobility; Electron optics; Gallium nitride; HEMTs; MODFETs; Molecular beam epitaxial growth; Nitrogen; Substrates; AlGaN; GaN; Si(110); high-electron-mobility transistor (HEMT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2005211

Filename

4655509