Title :
Increased Rate of Multiple-Bit Upset From Neutrons at Large Angles of Incidence
Author :
Tipton, Alan D. ; Zhu, Xiaowei ; Weng, Haixiao ; Pellish, Jonathan A. ; Fleming, Patrick R. ; Schrimpf, Ronald D. ; Reed, Robert A. ; Weller, Robert A. ; Mendenhall, Marcus
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN
Abstract :
Neutron interactions with terrestrial systems produce soft errors, increasing the failure-in-time (FIT) rate of advanced CMOS circuits. These neutron-induced errors are a critical reliability problem facing advanced technologies. This paper reports the accelerated neutron testing on a 90-nm CMOS SRAM that exhibits an increased multiple-bit upset FIT rate from neutrons at large angles of incidence. The modeling of these data is used to predict the reliability of ground-based systems.
Keywords :
CMOS memory circuits; SRAM chips; integrated circuit reliability; neutron effects; CMOS SRAM; failure-in-time rate; ground-based systems; incidence angles; modeling; multiple-bit upset; neutron testing; reliability; size 90 nm; CMOS technology; Circuit testing; Error correction; Life estimation; NASA; Neutrons; Predictive models; Protons; Random access memory; Semiconductor device modeling; Multiple-bit upset (MBU); neutron; soft error;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2008.2002356
